APTM100H46FT3G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APTM100H46FT3G

Description:

MOSFET 4N-CH 1000V 19A SP3

Stock:

8968

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$16.35

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Parameters

Current at 25 ° C - continuous drain (Id)

19A

Drain source voltage (Vdss)

1000V(1kV)

FET Type

4 N channels(H )

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

260nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

6800pF @ 25V

On resistance (maximum) for different Ids and Vgs

552 mΩ @ 16A,10V

Power - maximum

357W

Vgs (th) (maximum) for different Ids

5V @ 2.5mA

packing

bulk

series

POWER MOS 8™

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP3

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTM100H46FT3G（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8968,Price reference "real-time change" China/Hongkong。 APTM100H46FT3G package/specs, Download APTM100H46FT3G、Datasheet。